Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator

The implementation of a source to drain tunneling in ultrascaled devices using MS-EMC has traditionally led overestimated current levels the subthreshold regime. In order correct this issue and enhance capabilities type simulator, we discuss paper two alternative self-consistent solutions focusing on different parts simulation flow. first solution reformulates probability computation by modulating WKB approximation suitable way. second corresponds change calculation technique based utilization Landauer formalism. results from both are compared contrasted NEGF NESS. We conclude that modification constitutes most advisable strategy improve tool.